SI5415AEDU-T1-GE3
MOSFET P-CH 20V 25A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI5415AEDU-T1-GE3: P-Channel TrenchFET® MOSFET with 20V (Vdss) drain-source breakdown voltage. This single FET offers a continuous drain current of 25A (Tc) and a maximum on-resistance (Rds On) of 9.6mOhm at 10A, 4.5V (Vgs). Features include a gate charge (Qg) of 120 nC (max) at 8V (Vgs) and input capacitance (Ciss) of 4300 pF (max) at 10V (Vds). The device supports a wide drive voltage range from 1.8V to 4.5V. Power dissipation is rated at 3.1W (Ta) and 31W (Tc). Mounting is via Surface Mount in a PowerPAK® ChipFET™ Single package, supplied on Tape & Reel (TR). Operating temperature range is -50°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
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