SI5411EDU-T1-GE3
MOSFET P-CH 12V 25A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® SI5411EDU-T1-GE3 MOSFET. This single PowerPAK® ChipFET™ device features a 12V drain-source voltage and 25A continuous drain current at 25°C (Tc). Optimized for high efficiency, its low Rds(on) of 8.2mOhm is achieved at 6A and 4.5V Vgs. Key parameters include a low gate charge of 105nC (max) at 8V Vgs and an input capacitance of 4100pF (max) at 6V Vds. The device supports gate drive voltages from 1.8V to 4.5V, with a maximum gate-source voltage of ±8V. Power dissipation is rated at 3.1W (Ta) and 31W (Tc). Operating temperature range is -50°C to 150°C (TJ). The surface mount PowerPAK® ChipFET™ Single package is supplied on tape and reel. Applications include power management and switching in automotive and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 6 V |
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