SI5410DU-T1-GE3
MOSFET N-CH 40V 12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5410DU-T1-GE3 is an N-Channel TrenchFET® power MOSFET. This single FET features a 40V drain-source breakdown voltage and a continuous drain current rating of 12A at 25°C (Tc). With a maximum Rds(on) of 18mOhm at 6.6A and 10V Vgs, it offers low conduction losses. The device supports a gate drive voltage range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a typical input capacitance (Ciss) of 1350pF at 20V Vds and a gate charge (Qg) of 32nC at 10V Vgs. Maximum power dissipation is rated at 3.1W (Ta) and 31W (Tc). The component is housed in a PowerPAK® ChipFET™ Single package, suitable for surface mounting. Operating temperature range is -55°C to 150°C (TJ). This device is utilized in applications such as power management, automotive systems, and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 20 V |
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