SI5406DC-T1-E3
MOSFET N-CH 12V 6.9A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI5406DC-T1-E3 is an N-Channel Power MOSFET designed for efficient power switching. Featuring a 12V drain-source voltage and a continuous drain current capability of 6.9A at 25°C, this device offers a low on-resistance of 20mOhm maximum at 6.9A and 4.5V Vgs. The MOSFET utilizes advanced trench technology for enhanced performance. It is supplied in a compact 1206-8 ChipFET™ package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. Gate charge is rated at 20 nC maximum at 4.5V Vgs. This component is commonly found in applications within the consumer electronics and industrial automation sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 1.2mA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
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