SI5406CDC-T1-GE3
MOSFET N-CH 12V 6A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5406CDC-T1-GE3, an N-Channel TrenchFET® series MOSFET, offers a 12V drain-source voltage and a continuous drain current of 6A at 25°C (Tc). This component features a low on-resistance of 20mOhm maximum at 6.5A and 4.5V, with a gate threshold voltage of 1V maximum at 250µA. Designed for efficient power management, it supports drive voltages from 1.8V to 4.5V. The device has a maximum gate charge of 32 nC at 8V and an input capacitance of 1100 pF maximum at 6V. With a power dissipation of 2.3W (Ta) and 5.7W (Tc), it operates across a temperature range of -55°C to 150°C. The SI5406CDC-T1-GE3 is presented in an 8-SMD, Flat Leads 1206-8 ChipFET™ package, supplied on tape and reel. This MOSFET is commonly utilized in power supply and battery management applications within the consumer electronics and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 5.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 6 V |