SI5404BDC-T1-GE3
MOSFET N-CH 20V 5.4A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5404BDC-T1-GE3 is an N-Channel TrenchFET® power MOSFET. This device features a 20V drain-source voltage and a continuous drain current of 5.4A at 25°C ambient. The Rds(On) is specified at 28mOhm maximum at 5.4A and 4.5V Vgs. With a maximum power dissipation of 1.3W, it is suitable for demanding applications. The gate charge (Qg) is a maximum of 11nC at 4.5V Vgs, enabling efficient switching. This component utilizes a 1206-8 ChipFET™ package for surface mounting and operates across a temperature range of -55°C to 150°C. Key drive voltages are 2.5V and 4.5V. Applications can be found in power management, consumer electronics, and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |