SI5404BDC-T1-E3
MOSFET N-CH 20V 5.4A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel MOSFET, SI5404BDC-T1-E3, from the TrenchFET® series. This device features a 20V drain-source voltage and a continuous drain current of 5.4A at 25°C (Ta), with a maximum power dissipation of 1.3W (Ta). The Rds On is specified at a maximum of 28mOhm at 5.4A and 4.5V gate-source voltage, with drive voltages ranging from 2.5V to 4.5V. The gate charge (Qg) is a maximum of 11 nC at 4.5V. This surface mount component is housed in an 8-SMD, Flat Leads package (1206-8 ChipFET™) and is supplied on tape and reel. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±12V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. This component is utilized in power management and switching applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
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