SI5402BDC-T1-E3
MOSFET N-CH 30V 4.9A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI5402BDC-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 4.9A at 25°C with a power dissipation of 1.3W. The device exhibits a maximum on-resistance of 35mOhm at 4.9A and 10V Vgs. Operating with a gate-source voltage range of ±20V and a threshold voltage of 3V at 250µA, it utilizes a 4.5V to 10V drive voltage. The SI5402BDC-T1-E3 is housed in an 8-SMD, Flat Leads (1206-8 ChipFET™) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge of 20 nC at 10V. This MOSFET is engineered for operation across a wide temperature range of -55°C to 150°C. It finds application in power management, consumer electronics, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
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