SI5401DC-T1-GE3
MOSFET P-CH 20V 5.2A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix presents the SI5401DC-T1-GE3, a P-channel TrenchFET® Power MOSFET designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.2A at 25°C. The Rds(On) is specified at a maximum of 32mOhm at 5.2A and 4.5V Vgs, with drive voltages ranging from 1.8V to 4.5V for optimal Rds(On) performance. The SI5401DC-T1-GE3 is packaged in a compact 1206-8 ChipFET™ surface-mount case, offering a maximum power dissipation of 1.3W. Key parameters include a typical gate charge (Qg) of 25 nC at 4.5V, a gate-source voltage (Vgs) limit of ±8V, and a threshold voltage (Vgs(th)) of 1V at 250µA. This MOSFET is suitable for use in power management, battery charging, and load switching circuits within consumer electronics and industrial systems. The component operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
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