SI5401DC-T1-E3
MOSFET P-CH 20V 5.2A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI5401DC-T1-E3, is designed for challenging power management applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 5.2A at 25°C ambient. The low on-resistance of 32mOhm at 5.2A and 4.5V gate drive voltage, coupled with a 1.3W power dissipation capability, makes it suitable for high-efficiency switching. The SI5401DC-T1-E3 utilizes a P-Channel MOSFET technology in an 8-SMD, Flat Leads (1206-8 ChipFET™) package for surface mounting. Its gate charge is a maximum of 25 nC at 4.5V. This component finds application in automotive and industrial power systems requiring robust performance in a compact footprint. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
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