SI4892DY-T1-GE3
MOSFET N-CH 30V 8.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel TrenchFET® SI4892DY-T1-GE3 offers a 30V drain-to-source voltage and continuous drain current of 8.8A at 25°C. This surface-mount component features a maximum power dissipation of 1.6W and a low on-resistance of 12mOhm at 12.4A and 10V Vgs. It utilizes MOSFET technology with a gate charge of 10.5 nC at 5V. The device operates over a temperature range of -55°C to 150°C and is housed in an 8-SOIC package, supplied on tape and reel. Key applications include power management and switching circuits in industrial automation and computing systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 12.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 5 V |
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