SI4890DY-T1-GE3
MOSFET N-CH 30V 11A 8-SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, 30V, 11A continuous drain current (Ta) with 12mOhm maximum Rds(on) at 11A, 10V. This TrenchFET® series device, SI4890DY-T1-GE3, features a gate charge of 20 nC maximum at 5V and a gate-source voltage tolerance of ±25V. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting. With a power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, this component is designed for demanding applications across automotive, industrial, and power management sectors. The drive voltage for optimal Rds(on) is between 4.5V and 10V, with a threshold voltage (Vgs(th)) of 800mV minimum at 250µA.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
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