SI4890BDY-T1-GE3
MOSFET N-CH 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI4890BDY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Tc). With a low on-resistance of 12mOhm maximum at 10A and 10V, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum gate charge of 33nC at 10V and input capacitance of 1535pF at 15V. It offers a maximum power dissipation of 2.5W (Ta) and 5.7W (Tc). The SI4890BDY-T1-GE3 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, suitable for operation across a -55°C to 150°C junction temperature range. This component is frequently utilized in automotive and industrial power conversion systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1535 pF @ 15 V |