SI4890BDY-T1-E3
MOSFET N-CH 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4890BDY-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 16A at 25°C (Tc). With a low on-resistance (Rds On) of 12mOhm maximum at 10A and 10V, it minimizes conduction losses. The device offers a gate charge (Qg) of 33 nC maximum at 10V and input capacitance (Ciss) of 1535 pF maximum at 15V. Power dissipation is rated at 2.5W (Ta) and 5.7W (Tc). It is housed in an 8-SOIC package for surface mounting and operates across a wide temperature range of -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power systems. Drive voltages range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±25V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1535 pF @ 15 V |
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