SI4886DY-T1-GE3
MOSFET N-CH 30V 9.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI4886DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency power management applications. This component features a 30 V drain-source voltage and continuous drain current capability of 9.5 A at 25°C (Ta), with a maximum power dissipation of 1.56 W (Ta). The device exhibits a low on-resistance of 10 mOhm at 13 A and 10 V, a critical parameter for minimizing conduction losses. It operates with gate-source voltages from 4.5 V to 10 V for optimal Rds(On) performance and has a gate charge of 20 nC (max) at 5 V. The SI4886DY-T1-GE3 is housed in an 8-SOIC package for surface mounting and is supplied on tape and reel. Typical applications include load switching, power supplies, and battery management systems within the automotive and industrial sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
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