SI4884BDY-T1-GE3
MOSFET N-CH 30V 16.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix presents the SI4884BDY-T1-GE3, a TrenchFET® series N-Channel Power MOSFET. This component features a 30V drain-source voltage rating with a continuous drain current capability of 16.5A at 25°C (Tc). The device exhibits a maximum Rds(on) of 9mOhm at 10A and 10V gate-source drive, with specific drive voltage ranges of 4.5V to 10V. Key capacitance specifications include a Ciss of 1525pF (max) at 15V and a Qg of 35nC (max) at 10V. Designed for surface mounting, it is housed in an 8-SOIC package and supports a maximum power dissipation of 2.5W (Ta) or 4.45W (Tc). The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.45W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1525 pF @ 15 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
