SI4880DY-T1-GE3
MOSFET N-CH 30V 13A 8-SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel TrenchFET® SI4880DY-T1-GE3. This 30 V device features a continuous drain current of 13A at 25°C and a maximum power dissipation of 2.5W. Optimized for efficiency, it offers a low on-resistance of 8.5mOhm at 13A and 10V Vgs. The device utilizes a 4.5V to 10V drive voltage range with a gate charge of 25 nC at 5V. Fabricated with advanced TrenchFET® technology, it is housed in a compact 8-SOIC (0.154", 3.90mm Width) package for surface mounting. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for power management applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
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