SI4880DY-T1-E3
MOSFET N-CH 30V 13A 8-SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4880DY-T1-E3 is an N-Channel power MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 13A at 25°C, with a maximum power dissipation of 2.5W. The on-resistance (Rds On) is specified at a maximum of 8.5mOhm at 13A and 10V gate drive. It offers a low gate charge of 25 nC at 5V. The device operates within a temperature range of -55°C to 150°C and is packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting, supplied on a tape and reel. Key drive voltages for optimal Rds On performance range from 4.5V to 10V, with a maximum gate-source voltage of ±25V. The threshold voltage (Vgs(th)) is a maximum of 1.8V at 250µA. This MOSFET is utilized in various industrial sectors, including automotive and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
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