SI4876DY-T1-GE3
MOSFET N-CH 20V 14A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4876DY-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 14A at 25°C. The low on-resistance of 5mOhm at 21A and 4.5V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 1.6W (Ta), it is suitable for demanding thermal environments. The MOSFET offers a 2.5V to 4.5V gate drive range and a maximum gate charge (Qg) of 80 nC at 4.5V Vgs. Packaged in an 8-SOIC (0.154"", 3.90mm Width) case, this component is surface-mountable. It operates across a wide temperature range of -55°C to 150°C (TJ). Applications include DC-DC converters, power switching, and battery management systems in consumer electronics and industrial automation sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 21A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
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