SI4866BDY-T1-GE3
MOSFET N-CH 12V 21.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4866BDY-T1-GE3 TrenchFET® N-Channel MOSFET. This device features a 12V drain-source breakdown voltage and a continuous drain current capability of 21.5A at 25°C (Tc). The Rds(On) is specified at a maximum of 5.3mOhm at 12A and 4.5Vgs. Key electrical parameters include a maximum gate charge (Qg) of 80 nC at 4.5Vgs and a maximum input capacitance (Ciss) of 5020 pF at 6Vds. Power dissipation is rated at 2.5W (Ta) and 4.45W (Tc). Operating temperature range is -55°C to 150°C. The component is housed in an 8-SOIC package and is supplied on tape and reel. This MOSFET is suitable for applications in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.45W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5020 pF @ 6 V |