SI4866BDY-T1-E3
MOSFET N-CH 12V 21.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4866BDY-T1-E3 TrenchFET® N-Channel Power MOSFET. This device features a 12V drain-source voltage (Vdss) and supports continuous drain current (Id) up to 21.5A at 25°C (Tc) with a maximum power dissipation of 4.45W (Tc). The low on-resistance (Rds On) is 5.3mOhm at 12A and 4.5V Vgs. Designed for efficient switching, it exhibits a gate charge (Qg) of 80 nC at 4.5V Vgs and input capacitance (Ciss) of 5020 pF at 6V Vds. The MOSFET operates with drive voltages between 1.8V and 4.5V, with a maximum gate-source voltage (Vgs) of ±8V and a threshold voltage (Vgs(th)) of 1V at 250µA. Packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting, it is suitable for applications in power management, automotive, and industrial automation. Operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 4.45W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5020 pF @ 6 V |
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