SI4864DY-T1-GE3
MOSFET N-CH 20V 17A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4864DY-T1-GE3 is a TrenchFET® series N-Channel power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 17A at 25°C, with a maximum power dissipation of 1.6W. The Rds On is specified at a low 3.5mOhm at 25A and 4.5V Vgs. Key gate drive voltages include 2.5V and 4.5V for optimized Rds On performance. The device offers a gate charge (Qg) of 70 nC at 4.5V Vgs and a Vgs(th) of 2V at 250µA. Packaged in an 8-SOIC format, this surface mount device operates across an extended temperature range of -55°C to 150°C. It is supplied in Tape & Reel packaging. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors for power management and switching tasks.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 25A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
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