SI4864DY-T1-E3
MOSFET N-CH 20V 17A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4864DY-T1-E3 is an N-Channel TrenchFET® power MOSFET. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 17A at 25°C ambient. It offers a low on-resistance of 3.5mOhm maximum at 25A and 4.5V Vgs. The device is designed for efficient switching with a gate charge of 70nC maximum at 4.5V Vgs and can be driven with gate voltages as low as 2.5V. The maximum power dissipation is 1.6W at 25°C ambient. The SI4864DY-T1-E3 is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 25A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
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