SI4862DY-T1-GE3
MOSFET N-CH 16V 17A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SI4862DY-T1-GE3, offers a 16V drain-to-source voltage and a continuous drain current of 17A at 25°C. This device features a low on-resistance of 3.3mOhm at 25A and 4.5V Vgs. The gate charge is specified at 70 nC maximum at 4.5V Vgs. Designed for efficient power switching applications, it operates across a temperature range of -55°C to 150°C (TJ). The SI4862DY-T1-GE3 is housed in an 8-SOIC package and is supplied on tape and reel. Its specifications are suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
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