SI4858DY-T1-E3
MOSFET N-CH 30V 13A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SI4858DY-T1-E3, offers a 30V drain-source voltage rating and a continuous drain current capability of 13A at 25°C (Ta). This surface-mount device, housed in an 8-SOIC package, features a low on-resistance of 5.25mOhm maximum at 20A and 10V Vgs. The device supports a gate drive range from 4.5V to 10V, with a maximum gate charge of 40nC at 4.5V. Its maximum power dissipation is 1.6W (Ta) and it operates within a temperature range of -55°C to 150°C. This component is suitable for applications in power management and switching circuits across various industrial and consumer electronics sectors. The SI4858DY-T1-E3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.25mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
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