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SI4850EY-T1

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SI4850EY-T1

MOSFET N-CH 60V 6A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI4850EY-T1 is an N-Channel MOSFET with a 60V drain-to-source breakdown voltage. This component offers a continuous drain current of 6A at 25°C, with a maximum power dissipation of 1.7W. The device features a low on-resistance of 22mOhm at 6A and 10V Vgs, and a gate charge of 27nC at 10V Vgs. Designed for surface mounting, it is housed in an 8-SOIC package and operates across a temperature range of -55°C to 175°C. The SI4850EY-T1 is suitable for applications in power management and general-purpose switching, commonly found in consumer electronics and industrial automation.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs22mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V

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