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SI4850BDY-T1-GE3

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SI4850BDY-T1-GE3

MOSFET N-CH 60V 8.4A/11.3A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI4850BDY-T1-GE3 is a TrenchFET® Gen IV N-Channel Power MOSFET designed for demanding applications. This component offers a 60V drain-to-source voltage (Vdss) and continuous drain current capabilities of 8.4A at ambient temperature (Ta) and 11.3A at case temperature (Tc). Its low on-resistance (Rds(on)) of 19.5mOhm maximum at 10A and 10V Vgs, coupled with a maximum gate charge (Qg) of 17 nC at 10V Vgs, ensures efficient power delivery. The device supports a drive voltage range from 4.5V to 10V and has a maximum continuous drain current (Id) of 8.4A (Ta) with a power dissipation of 2.5W (Ta). The 8-SOIC package (0.154", 3.90mm width) is suitable for surface mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET finds utility in various industries including industrial power supplies and automotive applications.

Additional Information

Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 11.3A (Tc)
Rds On (Max) @ Id, Vgs19.5mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id2.8V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 30 V

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