SI4850BDY-T1-GE3
MOSFET N-CH 60V 8.4A/11.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4850BDY-T1-GE3 is a TrenchFET® Gen IV N-Channel Power MOSFET designed for demanding applications. This component offers a 60V drain-to-source voltage (Vdss) and continuous drain current capabilities of 8.4A at ambient temperature (Ta) and 11.3A at case temperature (Tc). Its low on-resistance (Rds(on)) of 19.5mOhm maximum at 10A and 10V Vgs, coupled with a maximum gate charge (Qg) of 17 nC at 10V Vgs, ensures efficient power delivery. The device supports a drive voltage range from 4.5V to 10V and has a maximum continuous drain current (Id) of 8.4A (Ta) with a power dissipation of 2.5W (Ta). The 8-SOIC package (0.154", 3.90mm width) is suitable for surface mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET finds utility in various industries including industrial power supplies and automotive applications.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 11.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V |
Request a Quote
Clients Also Buy
SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8
SISS06DN-T1-GE3
MOSFET N-CH 30V 47.6/172.6A PPAK
SIRA58ADP-T1-RE3
MOSFET N-CH 40V 32.3A/109A PPAK
