SI4848BDY-T1-GE3
N-CHANNEL 150-V (D-S) MOSFET SO-Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4848BDY-T1-GE3, an N-Channel TrenchFET® power MOSFET, offers a 150 V drain-to-source voltage and a continuous drain current of 3.7 A at 25°C ambient, or 5 A at 25°C case temperature. This component features a maximum power dissipation of 2.5 W ambient or 4.5 W case, with a low on-resistance of 89 mOhm maximum at 3.7 A and 10 V gate drive. Key parameters include a gate charge of 9 nC maximum at 10 V and input capacitance of 400 pF maximum at 75 V. Designed for surface mounting in an 8-SOIC package, it operates across a temperature range of -55°C to 150°C. The SI4848BDY-T1-GE3 is suitable for applications in power management, industrial automation, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta), 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 89mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 75 V |
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