SI4848ADY-T1-GE3
MOSFET N-CH 150V 5.5A 8SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4848ADY-T1-GE3 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 150 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.5 A at 25°C (Tc). The TrenchFET® series technology ensures low on-resistance (Rds On) of 84 mOhm maximum at 3.9 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 9.5 nC maximum at 10 V and input capacitance (Ciss) of 335 pF maximum at 75 V. With a maximum power dissipation of 5 W (Tc), it is suitable for operation across a wide temperature range of -55°C to 150°C (TJ). The component is provided in a standard 8-SOIC package suitable for surface mounting. Applications include power supplies, motor control, and general power management in industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 335 pF @ 75 V |
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