SI4845DY-T1-E3
MOSFET P-CH 20V 2.7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® Series P-Channel MOSFET, part number SI4845DY-T1-E3. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.7A at 25°C (Tc). The low on-resistance of 210mOhm is specified at 2A drain current and 4.5V gate-source voltage. The MOSFET utilizes Metal Oxide technology and is housed in an 8-SOIC package, suitable for surface mounting. Key parameters include a gate charge of 4.5 nC at 4.5V and input capacitance of 312 pF at 10V. The device incorporates an isolated Schottky diode. Power dissipation is rated at 1.75W (Ta) and 2.75W (Tc). This component is well-suited for applications in consumer electronics and industrial automation.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.75W (Ta), 2.75W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 10 V |
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