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SI4845DY-T1-E3

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SI4845DY-T1-E3

MOSFET P-CH 20V 2.7A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® Series P-Channel MOSFET, part number SI4845DY-T1-E3. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.7A at 25°C (Tc). The low on-resistance of 210mOhm is specified at 2A drain current and 4.5V gate-source voltage. The MOSFET utilizes Metal Oxide technology and is housed in an 8-SOIC package, suitable for surface mounting. Key parameters include a gate charge of 4.5 nC at 4.5V and input capacitance of 312 pF at 10V. The device incorporates an isolated Schottky diode. Power dissipation is rated at 1.75W (Ta) and 2.75W (Tc). This component is well-suited for applications in consumer electronics and industrial automation.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Rds On (Max) @ Id, Vgs210mOhm @ 2A, 4.5V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.75W (Ta), 2.75W (Tc)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds312 pF @ 10 V

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