SI4840DY-T1-E3
MOSFET N-CH 40V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel TrenchFET® SI4840DY-T1-E3. This 40V device features a maximum continuous drain current of 10A (Ta) and a maximum power dissipation of 1.56W (Ta). Optimized for low on-resistance, it achieves 9mOhm @ 14A, 10V. The device is housed in an 8-SOIC package and designed for surface mounting. Key specifications include a gate charge of 28nC at 5V and a gate-source voltage range of ±20V. Operating temperature is rated from -55°C to 150°C (TJ). This component finds application in power management, automotive, and industrial systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
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