SI4838DY-T1-E3
MOSFET N-CH 12V 17A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI4838DY-T1-E3 is a high-performance N-Channel Power MOSFET from the TrenchFET® series, engineered for demanding applications. This device features a drain-source voltage (Vdss) of 12 V and a continuous drain current (Id) of 17 A at 25°C. Its ultra-low on-resistance (Rds On) of 3 mOhm at 25 A and 4.5 V gate drive, coupled with a low gate charge (Qg) of 60 nC at 4.5 V, ensures efficient power switching. The MOSFET is housed in a standard 8-SOIC package, suitable for surface mounting. With a maximum power dissipation of 1.6 W (Ta) and an operating temperature range of -55°C to 150°C, it is well-suited for use in automotive, industrial, and consumer electronics power management systems. Drive voltages for optimal Rds On are specified at 2.5 V minimum and 4.5 V maximum, with a maximum gate-source voltage of ±8 V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 25A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
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