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SI4836DY-T1-GE3

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SI4836DY-T1-GE3

MOSFET N-CH 12V 17A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel MOSFET, part number SI4836DY-T1-GE3, is engineered with TrenchFET® technology. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) rating of 17A at 25°C. The low on-resistance is specified at a maximum of 3mOhm at 25A and 4.5V Vgs, with a typical gate charge of 75 nC at 4.5V. This device is available in a surface mount 8-SOIC package, ideal for applications requiring efficient power management in environments such as automotive, industrial automation, and consumer electronics. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta)
Rds On (Max) @ Id, Vgs3mOhm @ 25A, 4.5V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id400mV @ 250µA (Min)
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 4.5 V

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