SI4836DY-T1-E3
MOSFET N-CH 12V 17A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel SI4836DY-T1-E3. This TrenchFET® series device offers a 12V drain-source voltage with a continuous drain current capability of 17A at 25°C. The device features a low Rds(on) of 3mOhm maximum at 25A and 4.5V Vgs. Key drive voltages are specified at 1.8V minimum and 4.5V maximum. The gate charge (Qg) is 75nC maximum at 4.5V Vgs. With a maximum power dissipation of 1.6W, the SI4836DY-T1-E3 is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power management and switching applications across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 25A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 400mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 4.5 V |
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