SI4835BDY-T1-E3
MOSFET P-CH 30V 7.4A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4835BDY-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.4A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 18mOhm at 9.6A and 10V gate drive. It supports a wide gate-source voltage range from ±25V, with a threshold voltage (Vgs(th)) of 3V at 250µA and operates efficiently with gate drive voltages of 4.5V and 10V. With a maximum power dissipation of 1.5W (Ta) and a junction temperature range of -55°C to 150°C, this MOSFET is suitable for use in industrial, automotive, and power management systems. The SI4835BDY-T1-E3 is supplied in a compact 8-SOIC package, presented on tape and reel for automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 5 V |
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