SI4833BDY-T1-GE3
MOSFET P-CHANNEL 30V 4.6A 8SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® SI4833BDY-T1-GE3 is a P-channel Power MOSFET designed for efficient power switching. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.6A at 25°C (Tc). With a maximum power dissipation of 2.75W (Tc), it is housed in an 8-SOIC package, suitable for surface mounting applications. The device exhibits a low on-resistance (Rds On) of 68mOhm at 3.6A and 10V Vgs. Key characteristics include a gate charge (Qg) of 14 nC (max) at 10V Vgs and input capacitance (Ciss) of 350 pF (max) at 15V Vds. It incorporates an isolated Schottky diode and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in various applications including power management and consumer electronics.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 3.6A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.75W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 15 V |
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