SI4833ADY-T1-E3
MOSFET P-CH 30V 4.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® SI4833ADY-T1-E3 is a P-Channel MOSFET designed for power management applications. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current of 4.6A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 72mOhm at 3.6A drain current and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 15 nC maximum at 10V Vgs and an input capacitance (Ciss) of 750 pF maximum at 15V Vds. The MOSFET incorporates an isolated Schottky diode. Power dissipation is rated at 1.93W (Ta) and 2.75W (Tc). It is supplied in an 8-SOIC package suitable for surface mounting and operates within a temperature range of -55°C to 150°C. This component is commonly utilized in industrial and automotive sectors.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 3.6A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.93W (Ta), 2.75W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 15 V |
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