SI4831BDY-T1-GE3
MOSFET P-CH 30V 6.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI4831BDY-T1-GE3, offers a 30V drain-source breakdown voltage and a continuous drain current of 6.6A (Tc) at 25°C. This device features a low on-resistance of 42mOhm maximum at 5A and 10V Vgs. The P-channel MOSFET is housed in an 8-SOIC package and supports surface mount mounting. Key parameters include a gate charge of 26 nC maximum and input capacitance of 625 pF maximum. The device incorporates an isolated Schottky diode and operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 2W (Ta) and 3.3W (Tc). This component is suitable for applications in automotive, industrial, and consumer electronics.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 15 V |
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