SI4829DY-T1-GE3
MOSFET P-CH 20V 2A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI4829DY-T1-GE3, offers a 20V drain-source voltage and a continuous drain current of 2A at 25°C (Tc). This device features a low Rds(on) of 215mOhm at 2.5A and 4.5V Vgs, with a gate charge of 8nC maximum at 10V. The input capacitance (Ciss) is 210pF maximum at 10V. Designed for surface mounting in an 8-SOIC package, it includes an isolated Schottky diode. Power dissipation is rated at 2W (Ta) and 3.1W (Tc). This component is utilized in industrial automation, power management, and consumer electronics applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 2.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 10 V |
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