SI4825DY-T1-GE3
MOSFET P-CH 30V 8.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4825DY-T1-GE3 is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 8.1 A at 25°C (Ta). With a low on-resistance of 14 mOhm at 11.5 A and 10 V Vgs, it minimizes conduction losses. The device operates with a gate drive range from 4.5 V to 10 V and has a maximum Gate-Source Voltage (Vgs) of ±25 V. Its typical Gate Charge (Qg) is 71 nC at 10 V. The MOSFET has a maximum power dissipation of 1.5 W (Ta) and an operating junction temperature range of -55°C to 150°C. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, it is supplied on tape and reel (TR). This component is commonly utilized in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
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