SI4823DY-T1-GE3
MOSFET P-CH 20V 4.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® SI4823DY-T1-GE3 is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.1A at 25°C (Tc). Its Rds(On) is specified at a maximum of 108mOhm at 3.3A and 4.5V Vgs. The MOSFET incorporates an integrated Schottky diode for enhanced performance. With a package dissipation of 1.7W (Ta) and 2.8W (Tc), and a compact 8-SOIC (0.154", 3.90mm Width) surface mount package, it is suitable for space-constrained designs. Key parameters include a low Gate Charge (Qg) of 12nC (max) at 10V and an Input Capacitance (Ciss) of 660pF (max) at 10V. This component is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 108mOhm @ 3.3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.7W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 10 V |