SI4812BDY-T1-GE3
MOSFET N-CH 30V 7.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® N-Channel MOSFET, part number SI4812BDY-T1-GE3. This 30V device features a continuous drain current of 7.3A (Ta) and a maximum power dissipation of 1.4W (Ta). The N-Channel MOSFET technology offers a low Rds On of 16mOhm at 9.5A and 10V gate drive. Key specifications include a gate charge of 13 nC @ 5V and a threshold voltage of 3V @ 250µA. The device is housed in an 8-SOIC package suitable for surface mounting, with an operating temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power management applications across various industrial sectors. The SI4812BDY-T1-GE3 is supplied in Tape & Reel packaging.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
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