SI4778DY-T1-GE3
MOSFET N-CH 25V 8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® MOSFET N-CH 25V 8A 8SO, part number SI4778DY-T1-GE3. This N-Channel power MOSFET features a 25V drain-source voltage and a continuous drain current of 8A at 25°C (Tc). With a maximum Rds(on) of 23mOhm at 7A and 10V, it offers efficient power switching. The device supports a gate-source drive voltage range of 4.5V to 10V and has a typical gate charge of 18 nC at 10V. Input capacitance (Ciss) is rated at 680 pF maximum at 13V. Power dissipation is 2.4W (Ta) and 5W (Tc). It is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. This component finds application in power management, consumer electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 13 V |