SI4778DY-T1-E3
MOSFET N-CH 25V 8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, SI4778DY-T1-E3. This component features a 25V drain-to-source voltage (Vdss) and supports a continuous drain current of 8A at 25°C (Tc). Optimized for efficiency, it offers a maximum Rds(on) of 23mOhm at 7A and 10V Vgs. The device utilizes a 4.5V to 10V drive voltage range and has a gate charge (Qg) of 18nC at 10V. With a low input capacitance (Ciss) of 680pF at 13V, it is suitable for high-frequency switching applications. The maximum power dissipation is 2.4W (Ta) or 5W (Tc). Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, this MOSFET operates reliably within a temperature range of -55°C to 150°C (TJ). Its performance characteristics make it a key component in power management, automotive, and consumer electronics applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 13 V |
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