SI4776DY-T1-GE3
MOSFET N-CHANNEL 30V 11.9A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SkyFET®, TrenchFET® N-Channel Power MOSFET, part number SI4776DY-T1-GE3. This device features a 30V drain-source voltage and a continuous drain current capability of 11.9A at 25°C (Tc). The SI4776DY-T1-GE3 offers a low on-resistance of 16mOhm maximum at 10A and 10V Vgs, with a gate charge of 17.5 nC maximum at 10V. It is housed in a surface-mount 8-SOIC package and supports a maximum power dissipation of 4.1W (Tc). Operating temperature range is -55°C to 150°C (TA). This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 521 pF @ 15 V |
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