SI4774DY-T1-GE3
MOSFET N-CHANNEL 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4774DY-T1-GE3 is an N-Channel MOSFET from the SkyFET® and TrenchFET® series. This device features a 30V drain-source voltage and a continuous drain current of 16A at 25°C (Tc). With a low on-resistance of 9.5mOhm maximum at 10A and 10V, and a gate charge of 14.3 nC maximum at 4.5V, it is optimized for efficient power switching. The MOSFET includes an integrated Schottky diode. It is available in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C (TA). Key parameters include input capacitance of 1025 pF maximum at 15V and a maximum gate-source voltage of ±20V. This component is commonly utilized in automotive and industrial applications requiring high-efficiency power conversion.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1025 pF @ 15 V |
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