SI4752DY-T1-GE3
MOSFET N-CH 30V 25A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4752DY-T1-GE3 is an N-Channel Power MOSFET from the SkyFET® and TrenchFET® series, offering 30V drain-to-source voltage and 25A continuous drain current at 25°C (Tc). This device features a low Rds(on) of 5.5mOhm maximum at 10A and 10V, facilitated by a 4.5V to 10V drive voltage range. The MOSFET includes an integrated Schottky diode for enhanced performance. Designed for surface mounting in an 8-SOIC package, it dissipates up to 3W (Ta) or 6.25W (Tc). Key parameters include a gate charge of 43 nC maximum at 10V and input capacitance of 1700 pF maximum at 15V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 10A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 3W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V |
Request a Quote
Clients Also Buy
SI7772DP-T1-GE3
MOSFET N-CH 30V 35.6A PPAK SO-8
SI7726DN-T1-GE3
MOSFET N-CH 30V 35A PPAK1212-8
SI4712DY-T1-GE3
MOSFET N-CH 30V 14.6A 8SO