SI4712DY-T1-GE3
MOSFET N-CH 30V 14.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SkyFET®, TrenchFET® N-Channel MOSFET, part number SI4712DY-T1-GE3, offers a 30 V drain-to-source voltage and a continuous drain current of 14.6 A at 25°C (Tc). This component features a low Rds(on) of 13 mOhm maximum at 15 A and 10 V Vgs, with a gate charge (Qg) of 28 nC maximum at 10 V. The input capacitance (Ciss) is 1084 pF maximum at 15 V. It operates with drive voltages from 4.5 V to 10 V and has a maximum gate-source voltage of ±20 V. The SI4712DY-T1-GE3 is housed in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 2.5 W (Ta) and 5 W (Tc). This MOSFET is utilized in applications requiring efficient power switching, such as automotive systems and industrial power supplies.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1084 pF @ 15 V |