SI4688DY-T1-GE3
MOSFET N-CH 30V 8.9A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4688DY-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30 V drain-source voltage rating and a continuous drain current capability of 8.9 A at 25°C ambient temperature, with a maximum power dissipation of 1.4 W. The low on-resistance of 11 mOhm at 12 A and 10 V gate drive ensures minimal conduction losses. Key parameters include a gate charge of 38 nC and input capacitance of 1580 pF. The SI4688DY-T1-GE3 is housed in an 8-SOIC package, suitable for surface mounting. This component finds application in various industries, including consumer electronics, industrial automation, and telecommunications. It supports gate-source voltages up to ±20 V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1580 pF @ 15 V |
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