SI4684DY-T1-GE3
MOSFET N-CH 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4684DY-T1-GE3 is a 30V N-Channel power MOSFET designed for efficient power conversion. This device features a low on-resistance of 9.4mOhm at 16A and 10V Vgs, minimizing conduction losses. With a continuous drain current of 16A (Tc) and a maximum power dissipation of 4.45W (Tc), it is suitable for demanding applications. The MOSFET offers a gate charge of 45 nC at 10V and an input capacitance of 2080 pF at 15V. It operates across a wide temperature range of -55°C to 150°C (TJ) and is supplied in a surface-mount 8-SOIC package. Drive voltages range from 4.5V to 10V. This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.45W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 15 V |
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